Description
Product number: Germane GeH4 Gas
CAS :7782-65-2
Purity: 99.999%
Product specifications: 4L/8L/10L/40L/47L/50L
Product form: Germane GeH4 Gas
Main use: Germane GeH4 is used for producing germanium compounds.
Availability : In Stock
Certificate of Analysis
| ITEMS | UNIT | SPEC. | |
| Purity | % | ≥ 99.999 | |
| H2 | ppm | ≤ 50 | |
| N2 | ppm | ≤2.0 | |
| O2 + Ar | ppm | ≤2.0 | |
| CO2 | ppm | ≤1.0 | |
| CO | ppm | ≤1.0 | |
| THC as CH4 | ppm | ≤1.0 | |
| H2O | ppm | ≤3.0 | |
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Applications and Industries
Germane GeH4 gas is primarily used in the semiconductor industry for the deposition of germanium-containing thin films. Specifically, it’s used to create epitaxial and amorphous SiGe alloy layers in the production of high-performance devices like photovoltaic cells and integrated circuits.
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Semiconductor Industry:
Germane GeH4 gas is a precursor for depositing germanium-containing thin films, particularly in the fabrication of silicon-germanium (SiGe) alloys. These alloys are crucial for enhancing the electrical properties of semiconductor devices.
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Epitaxial Growth:
Germane GeH4 gas is used in techniques like Metal-Organic Vapor Phase Epitaxy (MOVPE) and chemical beam epitaxy for the epitaxial growth of germanium, which involves growing a crystalline layer on top of a substrate.
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Photovoltaic Cells:
Germane GeH4 gas plays a role in the production of solar cells, specifically in the deposition of layers that contribute to improved efficiency.
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Integrated Circuits:
Germane GeH4 gas is also used in the manufacturing of high-performance integrated circuits, where SiGe alloys can improve transistor performance.
