Description
Product Name: 72Germanium Tetrafluoride 72GeF4
CAS: 7783-58-6
Purity: 99.99 %
Product specifications: 5L，10L、100L
Product form: 72Germanium Tetrafluoride 72GeF4
Main use: used in semiconductor manufacturing, specifically in germanium ion implantation.
Availability : In Stock
What is 72Germanium Tetrafluoride (72GeF4) ?
72Germanium Tetrafluoride (72GeF4) is germanium tetrafluoride enriched with the 72Ge isotope. It’s a chemical compound used in semiconductor manufacturing, specifically in germanium ion implantation.
Certificate of Analysis
| ITEMS | UNIT | SPEC. | RESULT | ||
| Purity | % | ≥ 99.99 | > 99.99 | ||
| HF | ppmv | ≤ 25 | 9.18 | ||
| CO2 | ppmv | ≤ 25 | 9.99 | ||
| N2 | ppmv | ≤ 25 | 2.71 | ||
| O2+Ar | ppmv | ≤ 25 | < 2.00 | ||
| SO2 | ppmv | ≤ 25 | 0.07 | ||
| CO | ppmv | ≤ 25 | 11.14 | ||
| Enrichment Test | |||||
| ITEMS | UNIT | SPEC. | RESULT | ||
| Ge -70 | AT % | ≤ 14 | 13.70 | ||
| Ge -72 | AT % | > 57 | 61.92 | ||
| Ge -73 | AT % | ≤ 13 | 12.14 | ||
| Ge -74 | AT % | ≤ 21 | 12.13 | ||
| Ge -76 | AT % | ≤ 1 | 0.01 | ||
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What are applications of 72Germanium Tetrafluoride (72GeF4) ?
72Germanium Tetrafluoride (72GeF4) , or enriched germanium-72 tetrafluoride, is primarily used in the semiconductor industry for ion implantation during the manufacturing of advanced electronic devices. Specifically, it’s used to create a pre-amorphized layer in silicon wafers, which helps optimize device performance and prevent dopant channeling.
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Pre-amorphization Implantation (PAI):
72Germanium Tetrafluoride (72GeF4) is used in the PAI process, where germanium ions are implanted into the silicon wafer before other dopants are introduced.
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Controlling Channeling:
The germanium implant helps to disrupt the crystalline structure of the silicon, preventing dopants from traveling too far into the material and creating a more uniform dopant profile.
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Reducing Transient Enhanced Diffusion (TED):
PAI with 72GeF4 also helps to minimize TED, which is a phenomenon where dopants diffuse more rapidly than expected during device fabrication.
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Improving Device Performance:
By controlling channeling and TED, 72GeF4 implantation helps to create ultra-shallow junctions with improved electrical characteristics, leading to faster and more efficient devices.
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Source Efficiency:The use of enriched 72GeF4, especially in combination with hydrogen, has been shown to improve ion source performance and beam current during implantation, increasing manufacturing efficiency.
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