Description
Product Name: Disilane Si2H6 Gas
CAS :1590-87-0
Purity: 99.998 %
Product specifications: 4L/8L/10L/40L/47L/50L
Product form: Disilane Si2H6 Gas
Main use: Disilane (Si2H6): Used as a silicon source in the semiconductor industry.
Availability : In Stock
What is Disilane (Si2H6 )?
Disilane (Si2H6 ) is a key material in advanced semiconductor manufacturing and primarily used in the latest and most sophisticated generation of integrated circuits such as NAND Flash memory. It deposits a-Si and silicon dioxide at a lower temperature than silane enabling its use in smaller IC’s with a thermal budget constraint. Disilane can also be reacted with germanium in deposition tools to produce SiGe layers that strain the silicon and improve the performance of single-digit nano scale integrated circuits (ICs).
Certificate of Analysis
| Component | Unit | Specification |
| Si2H6 | % | ≥99.998% |
| SiH4 | ppm | ≤ 200 |
| H2 | ppm | ≤ 100 |
| N2 | ppm | ≤ 1.0 |
| O2+Ar | ppm | ≤ 1.0 |
| He | ppm | ≤ 1.0 |
| CO | ppm | ≤ 1.0 |
| CO2 | ppm | ≤ 1.0 |
| Higher-Order Silanes | ppm | ≤ 50 |
| Chlorosilanes | ppm | ≤ 0.2 |
| Siloxane | ppm | ≤ 5.0 |
| THC(as CH4) | ppm | ≤ 1.0 |
| H2O | ppm | ≤ 1.0 |
NOTE : For other grades, dont hesitate to call or contact tao.hu@asiaisotope.com for more technical details.
What are applications of Disilane (Si2H6 ) ?
Disilane (Si2H6) is a key material in advanced semiconductor manufacturing, specifically in chemical vapor deposition (CVD) processes for creating thin films. It’s used as a silicon source precursor in various applications, including the production of integrated circuits, solar cells, and other silicon-based materials. Disilane offers advantages over silane (SiH4) in terms of film density, deposition smoothness, and lower deposition temperatures, leading to improved efficiency and performance in these technologies.
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Epitaxial Growth:
Disilane is used to grow thin, crystalline silicon layers (epitaxial growth) on semiconductor wafers, which is crucial for creating devices like transistors and diodes.
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Amorphous Silicon Deposition:
It’s a precursor for depositing amorphous silicon (a-Si:H), a material used in solar cells and thin-film transistors.
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SiGe Alloys:
Disilane can be combined with germanium precursors to create silicon-germanium alloys (SiGe), which are used to enhance transistor performance in advanced microchips.
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DRAM and NAND Flash:
Disilane is adopted in various critical memory chip manufacturing steps, including self-aligned contacts for DRAM and gate polysilicon deposition for flash memory.
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Gate Polysilicon Deposition:
In logic devices, disilane is used in the first layer of gate polysilicon deposition, a key component in integrated circuits.
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Low-Temperature Processing:
Disilane allows for lower temperature deposition compared to silane, enabling the creation of smaller, more complex devices with tighter thermal budgets.
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Solar Cells:
Disilane is used in the production of silicon-based solar cells, contributing to the creation of efficient photovoltaic devices.
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Silicon Microspheres and Photonic Crystals:
Disilane is also involved in the fabrication of silicon microspheres and photonic crystals, which have applications in various optical and electronic devices.
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Nanotechnology:
Disilane is used in nanotechnology processes for uniform thin film deposition.
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Higher Film Density:
Disilane typically results in denser and more compact silicon films compared to silane.
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Faster Deposition Rates:
Disilane can deposit films at a faster rate than silane.
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Lower Deposition Temperatures:
Disilane allows for lower temperature processing, which is advantageous for many applications.
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Improved Smoothness and Continuity:
Disilane can lead to smoother and more continuous films, which is important for device performance.
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Enhanced Dopant Incorporation:Disilane can improve the incorporation of dopants into silicon films, which is essential for controlling electrical properties.
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